Abstract: Organic field-effect transistors (OFETs) that are intrinsically flexible are desirable components for wearable electronics. A major challenge for these electronics is electrostatic discharge ...
BEIJING -- A team of Chinese researchers has developed the world's smallest ferroelectric transistor with ultralow power consumption, offering new insights into progress in the semiconductor industry, ...
Abstract: The tri-gate MOSFET is a vertical power transistor with multiple sub-micron FinFET channels. The FinFET structure increases the current-carrying width of the MOS inversion layer without ...
SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-Si, Gyeonggi-do 16419, Republic of Korea ...
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