Newark, Calif. – M-Systems Inc., here, and Toshiba America Electronic Components Inc. (San Jose, Calif.) have jointly developed and will separately market a 512-Mbit (64-Mbyte) flash memory device in ...

Manufactured in a 50-nm process technology, the 16-Gbit flash memory device from Samsung employs a 4-kbyte page size to enhance performance. Samsung Electronics Co. Ltd. has started sampling its ...

Intel Corp. and Micron Technology Inc. today are set to unveil a jointly developed 34-nanometer, 32-gigabit NAND flash memory chip that should enable the production of cheaper solid-state drives with ...

South Korea's SK Hynix Inc has developed its most advanced NAND flash chip made up of 238 layers of memory cells for use in PC storage devices and later smartphones and servers, the world's ...

NAND flash technology is on a roll with advancements in cell structure and the subsequent boost in storage density. That allows this non-volatile-memory (NVM) chip to deliver faster throughput and ...

Micron announced its first 3D NAND chip for mobile devices with the goal of cramming more storage into handsets, and maybe reducing reliance on SD card slots. 3D NAND provides more capacity in the ...

In May, Micron announced that it had developed a 232-layer three level cell (TLC) NAND flash chip. The company just announced that it was shipping these chips. Micron said that, “It features the ...