Before circuit design can begin on any advanced semiconductor manufacturing process, the electrical behavior of the devices — transistors, diodes, resistors — must be described accurately in so-called ...

Ikoma, Japan – Scientists from Nara Institute of Science and Technology (NAIST) used the mathematical method called automatic differentiation to find the optimal fit of experimental data up to four ...

Philips has developed an advanced Mosfet compact model intended to provide a more accurate description of device behaviours for the 90nm, 65nm and 45nm process generations. Compact models are used as ...

A SPICE model based on the BSIM3 core eliminates shortcomings in the existing level 1 and level 3 subcircuit models, enabling better simulation of trench-type power MOSFETs. An improved SPICE model ...

High-voltage MOSFETs are indispensable components in power electronics, where they are required to manage substantial voltages with high efficiency and reliability ...

Increasingly, applications such as DC/DC converters, power management units (PMU)[1], LED display power[2] and integrated display lighting solutions rely on integrated power MOSFETs (e.g., LDNMOS).

A new compact transistor model was developed and the framework for realizing a faster design support process and product development for integrated circuits in the ultra-low voltage category was ...

(Nanowerk News) Koichi Fukuda and others, Collaborative Research Team Green Nanoelectronics Center, the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and ...

Metal-oxide-semiconductor field-effect transistors (MOSFETs) have revolutionized the world of electronics due to their remarkable performance and widespread applications. The MOSFET transistor is a ...

Before circuit design can begin on any advanced semiconductor manufacturing process, the electrical behavior of the devices — transistors, diodes, resistors — must be described accurately in so-called ...