Hitachi, Ltd. (NYSE: HIT / TSE: 6501) in cooperation with Elpida Memory, Inc. (TSE: 6665), have proposed a new DRAM(*1) circuit design enabling 0.4-V operation. The proposed array employs a twin cell ...
Dynamic random access memory (DRAM) remains a cornerstone of modern electronic systems, enabling rapid data storage and retrieval. Recent developments have focused on capacitorless designs – notably ...
Kioxia says it has developed highly stackable oxide-semiconductor channel transistors capable of supporting high-density 3D ...
TL;DR: Samsung Electronics plans to launch its next-generation low-power wide I/O (LPW) DRAM, also known as low-latency wide I/O (LLW), in 2028. This "mobile HBM" memory aims to enhance on-device AI ...
TL;DR: SK hynix unveiled a 30-year DRAM roadmap featuring 4F2 Vertical Gate and 3D DRAM technologies to enhance performance, integration, and power efficiency beyond 10nm scales. These innovations aim ...
Analysts warn of steep increase in smartphone and PC prices as a global shortage of memory chips leaves manufacturers ...
Advantest announces the Memory Handler M5241, its next-generation handler developed to meet the performance, automation and ...
TOKYO, Feb. 12, 2025 (GLOBE NEWSWIRE) -- Leading semiconductor test equipment supplier Advantest Corporation (TSE: 6857) today announced the T5801 Ultra-High-Speed DRAM Test System. The cutting-edge ...
Smartphones are getting more AI features, not fewer, but rising memory prices may force manufacturers to ship phones with ...
Dynamic random-access memory (DRAM) chips contain many other transistors besides the access transistor to enable full operation of the DRAM memory. These peripheral transistors must meet stringent ...
In-memory computing (IMC) has had a rough go, with the most visible attempt at commercialization falling short. And while some companies have pivoted to digital and others have outright abandoned the ...
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